Gilashin mai rufi,ito gilashin gilashi,ito gilashin murfin
Hotunan Kayayyaki
ITO conductive mai rufi gilashin da aka yi ta hanyar yada silicon dioxide (SiO2) da indium tin oxide (wanda aka fi sani da ITO) Layer ta magnetron sputtering fasaha a kan gilashin substrate karkashin gaba ɗaya vacuumed yanayin, yin rufi fuska conductive, ITO ne wani karfe fili tare da kyau m da kuma m. conductive Properties.
Bayanan fasaha
ITO gilashin kauri | 0.4mm, 0.5mm, 0.55mm, 0.7mm, 1mm, 1.1mm, 2mm, 3mm, 4mm | ||||||||
juriya | 3-5Ω | 7-10Ω | 12-18Ω | 20-30Ω | 30-50Ω | 50-80Ω | 60-120Ω | 100-200Ω | 200-500Ω |
shafi kauri | 2000-2200A | 1600-1700 | 1200-1300 | 650-750 | 350-450 | 200-300 Å | 150-250 | 100-150 Å | 30-100 Å |
Gilashin juriya | |||
Nau'in juriya | ƙananan juriya | juriya na al'ada | babban juriya |
Ma'anarsa | <60Ω | 60-150Ω | 150-500Ω |
Aikace-aikace | Gilashin juriya gabaɗaya ana amfani dashi don kariya ta lantarki da samar da allon taɓawa | Gilashin juriya na yau da kullun ana amfani da shi don nunin kristal mai nau'in TN da kuma tsangwama na lantarki (EMI garkuwa) | Ana amfani da ƙaramin gilashin juriya gabaɗaya a cikin nunin kristal na ruwa na STN da allon kewayawa na gaskiya |
Gwajin aiki da gwajin dogaro | |
Hakuri | ± 0.2mm |
Shafin War | kauri<0.55mm, warpage≤0.15% kauri:0.7mm, warpage≤0.15% |
ZT a tsaye | ≤1° |
Tauri | >7H |
Gwajin Abrasion Coating | 0000# karfe ulu mai 1000gf,Keke 6000, keke 40/min |
Gwajin rigakafin lalata (gwajin feshin gishiri) | NaCL maida hankali 5%: Zazzabi: 35°C Lokacin gwaji: Canjin juriya na 5min≤10% |
Gwajin juriya na danshi | 60℃,90% RH,Canjin juriya na awa 48≤10% |
Gwajin juriyar acid | HCL maida hankali: 6%, Zazzabi: 35°C Lokacin gwaji: 5min juriya canji≤10% |
Gwajin juriya na Alkali | NaOH maida hankali: 10%, Zazzabi: 60 ° C Lokacin gwaji: 5min juriya canji≤10% |
Kwanciyar hankali | Zazzabi: 300 ° C lokacin dumama: 30min juriya canji≤300% |
Gudanarwa
Si02 Layer:
(1) Matsayin Layer SiO2:
Babban maƙasudin shine don hana ions ƙarfe a cikin ruwan soda-calcium daga watsawa cikin Layer ITO.Yana rinjayar conductivity na ITO Layer.
(2) Kaurin fim na Layer SiO2:
Matsakaicin kauri na fim ɗin shine gabaɗaya 250 ± 50 Å
(3) Sauran abubuwan da ke cikin Layer SiO2:
Yawancin lokaci, don inganta watsawar gilashin ITO, wani yanki na SiN4 yana cikin SiO2.