tsika iyo yakavharwa girazi substrate
Zvigadzirwa Pics
ITO conductive coated glass inogadzirwa nekuparadzira silicon dioxide (SiO2) uye indium tin oxide (inowanzozivikanwa seITO) layer nemagnetron sputtering tekinoroji pagirazi substrate pasi pemamiriro ekunze akavharwa, ichiita yakavharwa kumeso conductive, ITO isimbi isanganiswa ine zvakanaka conductive properties.
Technical data
ITO girazi ukobvu | 0.4mm, 0.5mm,0.55mm,0.7mm,1mm,1.1mm,2mm,3mm,4mm | ||||||||
resistance | 3-5Ω | 7-10Ω | 12-18Ω | 20-30Ω | 30-50Ω | 50-80Ω | 60-120Ω | 100-200Ω | 200-500Ω |
kukoira ukobvu | 2000-2200Å | 1600-1700Å | 1200-1300Å | 650-750Å | 350-450Å | 200-300Å | 150-250Å | 100-150Å | 30-100Å |
Girazi kuramba | |||
Resistance type | kushomeka kushoma | normal resistance | kupikisa kukuru |
Tsanangudzo | <60Ω | 60-150Ω | 150-500Ω |
Application | Yakakwirira kuramba girazi inowanzo shandiswa kudzivirira electrostatic uye yekubata screen kugadzira | Yakajairika kuramba girazi rinowanzo shandiswa kune TN mhando yemvura yekristaro kuratidza uye yemagetsi anti-kupindira (EMI kudzivirira) | Yakaderera kuramba girazi inowanzo shandiswa muSTN liquid crystal displays uye transparent circuit board |
Kushanda bvunzo uye kuvimbika bvunzo | |
Kushivirira | ±0.2mm |
Warpage | ukobvu<0.55mm, warpage≤0.15% ukobvu>0.7mm,warpage≤0.15% |
ZT yakatwasuka | ≤1° |
Kuoma | >7H |
Coating Abrasion bvunzo | 0000# shinda yesimbi ine 1000gf,6000cycles,40cycles/min |
Anti Corrsion Test (munyu wekupfapfaidza bvunzo) | NaCL concentration 5%: Kupisa: 35 ° C Nguva yekuedza: 5min kuramba shanduko≤10% |
Humidity resistance test | 60℃,90% RH,48 maawa kuramba shanduko≤10% |
Acid resistance test | HCL concentration: 6%, Tembiricha: 35 ° C Nguva yekuedza: 5min kuramba shanduko≤10% |
Alkali resistance test | NaOH kusungwa: 10%, Tembiricha: 60 ° C Nguva yekuedza: 5min kuramba shanduko ≤10% |
Themal kugadzikana | Tembiricha:300°C kupisa nguva:30min kuramba shanduko≤300% |
Processing
Si02 layer:
(1) Basa reSiO2 layer:
Chinangwa chikuru ndechekudzivirira maion esimbi ari musoda-calcium substrate kuti isapararire muITO layer.Inokanganisa conductivity yeITO layer.
(2) Firimu ukobvu hweSiO2 layer:
Iyo yakajairwa firimu ukobvu kazhinji 250 ± 50 Å
(3) Zvimwe zvikamu muSiO2 layer:
Kazhinji, kuitira kuti uvandudze kutapurirana kwegirazi reITO, chimwe chikamu cheSiN4 chinoiswa muSiO2.