isiko ito camera substrate
Iimveliso Pis
I-ITO conductive iglasi egqunywe ngeglasi yenziwe ngokusasaza isilicon dioxide (SiO2) kunye ne-indium tin oxide (eyaziwa ngokuba yi-ITO) umaleko wetekhnoloji yemagnetron yokutshiza kwiglasi ephantsi kweglasi phantsi kwemeko yokucoca ngokupheleleyo, isenza ubuso obugqunyiweyo bube conductive, i-ITO yikhompawundi yentsimbi ecacileyo kwaye iipropati conductive.
Idatha yobugcisa
Ubukhulu beglasi ye-ITO | 0.4mm, 0.5mm, 0.55mm, 0.7mm, 1mm, 1.1mm, 2mm, 3mm, 4mm | ||||||||
ukuxhathisa | 3-5Ω | 7-10Ω | 12-18Ω | 20-30Ω | 30-50Ω | 50-80Ω | 60-120Ω | 100-200Ω | 200-500Ω |
Ubunzima bokugquma | 2000-2200Å | 1600-1700Å | 1200-1300Å | 650-750Å | 350-450Å | 200-300Å | 150-250Å | 100-150Å | 30-100Å |
Ukumelana neglasi | |||
Uhlobo lokuchasa | ukumelana okuphantsi | ukuxhathisa okuqhelekileyo | ukumelana okuphezulu |
Ingcaciso | <60Ω | 60-150Ω | 150-500Ω |
Isicelo | Iglasi yokuxhathisa ephezulu isetyenziselwa ukhuseleko lwe-electrostatic kunye nokuveliswa kwesikrini sokuchukumisa | Iglasi yokuxhathisa eqhelekileyo isetyenziswa ngokubanzi kuhlobo lwe-TN lolwelo lokubonisa ikristale kunye ne-elektroniki yokuchasana nokuphazamiseka (Emi shielding) | Iglasi yokumelana ephantsi isetyenziswa ngokubanzi kwi-STN liquid crystal displays kunye neebhodi zesekethe ezicacileyo |
Uvavanyo olusebenzayo kunye nokuthembeka kovavanyo | |
Ukunyamezelana | ±0.2mm |
Warpage | ubukhulu<0.55mm, iphepha lokulwa≤0.15% ubukhulu>0.7mm, iphepha lokulwa≤0.15% |
ZT nkqo | ≤1° |
Ukuqina | >7H |
Uvavanyo lwe-Coating Abrasion | 0000 # uboya bentsimbi kunye ne 1000gf,I-6000cycles,40cycles / min |
Uvavanyo lwe-anti Corrsion (uvavanyo lokutshiza ngetyuwa) | Uxinzelelo lwe-NaCL 5%: Ubushushu: 35 ° C Ixesha lokulinga: 5min ukumelana nokutshintsha≤10% |
Uvavanyo lokuxhathisa ukufuma | 60℃,90%RH,Ukutshintsha kweeyure ezingama-48 zokuchasana≤10% |
Uvavanyo lokumelana ne-Acid | Uxinzelelo lwe-HCL: 6%, Ubushushu: 35 ° C Ixesha lokulinga: Ukutshintsha kwe-5min yokuchasana≤10% |
Uvavanyo lokumelana ne-alkali | I-NaOH yoxinaniso: 10%, Ubushushu: 60 ° C Ixesha lokulinga: 5min yokutshintsha ukuchasana≤10% |
Uzinzo lweThemal | Iqondo lobushushu:300°C ixesha lokufudumeza:30min ukuxhathisa utshintsho≤300% |
Iyaqhuba
Si02 umaleko:
(1) Indima yomaleko we-SiO2:
Injongo ephambili kukuthintela i-ion zetsimbi kwi-soda-calcium substrate ukuba ingasasazeki kwi-ITO layer.Ichaphazela ukuhanjiswa kwe-ITO layer.
(2) Ubunzima befilimu yomaleko we-SiO2:
Ubukhulu befilimu obuqhelekileyo buqhele ukuba ngama-250 ± 50 Å
(3) Amanye amacandelo kumaleko we-SiO2:
Ngokuqhelekileyo, ukwenzela ukuphucula ukuhanjiswa kweglasi ye-ITO, inxalenye ethile ye-SiN4 ifakwe kwi-SiO2.